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MT29F512G08EBHAFB17A3WC1-R

Part No MT29F512G08EBHAFB17A3WC1-R
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 512Gb NAND Flash Wafer
Sample
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ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1453231-MT29F512G08EBHAFB17A3WC1-R
Manufacturer Micron Technology Inc.
Package Bulk
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (TLC)
Memory Size 512Gbit
Memory Organization 64G x 8
Memory Interface Parallel
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C
Grade -
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Ultra Librarian 3D Model Ultra Librarian MT29F512G08EBHAFB17A3WC1-R CAD Model

Description

The MT29F512G08EBHAFB17A3WC1-R by Micron is a sophisticated NAND Flash Wafter offering an extensive storage capacity of 512Gb. This product appeals especially to manufacturers and developers looking for raw, high-capacity storage components for integration into varied applications. Being a wafer, it allows for flexibility in the manufacturing process, enabling the production of various NAND flash-based products. This high storage capacity component is ideal for next-generation consumer electronics, data centers, and industrial applications requiring high-density, reliable storage solutions. Its design is tailored towards ensuring reliability, durability, and high-speed data access, making it an excellent choice for devices where performance cannot be compromised. With Micron's renowned manufacturing expertise, this wafer offers unparalleled performance and reliability, ensuring it meets the rigorous standards expected by today's technology providers.

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