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MT29F4T08GMLBEJ4:B

Part No MT29F4T08GMLBEJ4:B
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 4Tb(512GB) QLC NAND Flash
Sample
Rohs State Need to verify
ECAD Module
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Category IT infrastructure Memory
Manufacturer Micron Technology Inc.
Win Source Part Number 1453843-MT29F4T08GMLBEJ4:B
Package Bulk
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Tbit
Memory Organization 512G x 8
Memory Interface Parallel
Voltage - Supply 2.5V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 132-VBGA
Supplier Device Package 132-VBGA (12x18)
Ultra Librarian 3D Model Ultra Librarian MT29F4T08GMLBEJ4:B CAD Model

Description

The MT29F4T08GMLBEJ4:B is a cutting-edge NAND Flash memory chip developed by Micron Technology, featuring a storage capacity of 4 terabits (512 gigabytes). This chip employs QLC (Quad-Level Cell) technology, which enables each memory cell to store four bits of data, thus maximizing storage density. It's an ideal component for systems requiring large storage capacities within compact footprints, such as solid-state drives (SSDs), enterprise storage solutions, and high-end consumer electronics. The use of QLC technology not only enhances storage efficiency but also helps reduce the cost per gigabyte, making high-capacity storage solutions more accessible. Micron's expertise in memory technology is embodied in this product, offering superior performance, reliability, and energy efficiency, making it a top choice for designers seeking to leverage the benefits of advanced NAND Flash memory in their products.

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