The MT29F1HT08EMHBBJ4-3R:B is a NAND flash memory device manufactured by Micron Technology Inc. It is a high-density, non-volatile memory solution designed for use in solid-state drives (SSDs), embedded systems, and other storage applications. This device offers high performance, reliability, and endurance, making it suitable for demanding storage requirements.

Applications

• Solid-state drives (SSDs)
• Embedded systems
• Mobile devices
• Data loggers
• Industrial storage

Features

• 128Gb (16GB) capacity
• NAND flash technology
• ONFI 3.0 interface
• Asynchronous I/O
• Multi-level cell (MLC) architecture

Benefits

• Provides high-density storage capacity
• Offers fast read and write performance
• Enables low power consumption
• Ensures data retention in the absence of power
• Improves system responsiveness and performance

Additional Details

The MT29F1HT08EMHBBJ4-3R:B operates at a data transfer rate of up to 200 MT/s. It supports various error correction codes (ECC) to ensure data integrity. The device is available in a BGA package for surface mount assembly. The operating temperature range is -40°C to +85°C. It is compliant with industry standards for NAND flash memory devices. The part number indicates a specific configuration and performance grade within Micron's product line.