The MT28F004B5VG-6TE is a 4 Mbit (512Kb x 8 or 256Kb x 16) parallel Flash memory device manufactured by Micron Technology Inc. It is designed for embedded systems and applications that require reliable, non-volatile storage of data and code. This memory chip provides a combination of high density, fast access times, and low power consumption.

Applications

• Embedded Systems Firmware Storage
• Industrial Control Systems
• Networking Equipment
• Medical Devices
• Automotive Electronics

Features

• 4 Mbit Density
• Configurable as 512Kb x 8 or 256Kb x 16
• Fast Access Times
• Low Power Operation
• Sector Erase Architecture
• Embedded Erase and Program Algorithms
• CMOS Technology

Benefits

• Reliable Non-Volatile Storage: Ensures data retention even when power is removed, safeguarding critical information.
• Fast Read Access: Enables quick retrieval of stored data, enhancing system performance.
• Efficient Power Consumption: Minimizes energy usage, making it suitable for battery-powered and energy-sensitive applications.
• Easy Integration: Simplifies system design with a standard parallel interface.
• Flexible Memory Configuration: Adaptable to various system needs by allowing configuration as either 512Kb x 8 or 256Kb x 16.

The MT28F004B5VG-6TE is engineered for high endurance and data integrity. Its sector erase architecture allows selective erasure of memory blocks, maximizing the device's lifespan. The embedded algorithms automate the programming and erasing processes, which streamlines the software interface and reduces development time. It is frequently utilized for storing firmware, configuration parameters, and application code in diverse electronic devices.