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JANTXV1N6625US/TR

Part No JANTXV1N6625US/TR
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description RECTIFIER UFR,FRR / Diode Standard 1.1 V 1A Surface Mount D-5A
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/585
Package Tape & Reel (TR)
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 1.1 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns
Current - Reverse Leakage @ Vr 1 µA @ 1.1 V
Mounting SMD (SMT)
Package / Case SQ-MELF, A
Supplier Device Package D-5A
Operating Temperature - Junction -65°C ~ 150°C
ECCN EAR99
HTSUS 8541.10.0080
Other Names 150-JANTXV1N6625US/TR
Standard Package 1
Win Source Part Number 1203786-JANTXV1N6625US/TR
Ultra Librarian 3D Model Ultra Librarian JANTXV1N6625US/TR CAD Model

Description

Product Overview: JANTXV1N6625US/TR by Microchip Technology

The JANTXV1N6625US/TR is a high-reliability, small signal Schottky diode designed and manufactured by Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This diode is specifically engineered to meet the stringent requirements of military and aerospace applications, ensuring optimal performance in the most demanding environments.

Fabricated with Microchip's cutting-edge semiconductor technology, the JANTXV1N6625US/TR diode is part of the company's JAN, JANTX, and JANTXV series, which are qualified to MIL-PRF-19500/578 specifications. These designations indicate the product's quality level, with JANTXV representing the highest reliability level for military-grade components, providing exceptional performance and durability.

The diode's ultra-small package, the US package, is designed for space-constrained applications, offering a compact footprint without compromising on electrical performance. The "TR" suffix denotes that the product is provided in tape and reel packaging, ensuring ease of handling and suitability for high-volume automated assembly processes.

Key features of the JANTXV1N6625US/TR include its low forward voltage drop, which enhances system efficiency by minimizing power loss. Its fast switching speed is ideal for high-frequency operations, and the Schottky barrier design ensures low leakage current, contributing to the overall low power consumption of the system it is integrated into.

The robust construction of the JANTXV1N6625US/TR diode ensures it can withstand harsh operating conditions, including high temperatures and radiation levels. This makes it an excellent choice for mission-critical applications in military avionics, satellite systems, and space exploration equipment, where reliability and performance are non-negotiable.

Microchip Technology's commitment to quality is reflected in the comprehensive testing and certification of the JANTXV1N6625US/TR, ensuring that each diode meets the highest standards for performance and reliability. With Microchip's global support network, customers can expect exceptional service and technical assistance for their high-reliability component needs.

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