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JANS1N5711UB/TR

Part No JANS1N5711UB/TR
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE SMALL-SIGNAL SCHOTTKY / Diode Schottky 50 V Surface Mount UB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/444
Package Tape & Reel (TR)
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 200 nA @ 50 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz
Mounting SMD (SMT)
Package / Case 4-SMD, No Lead
Supplier Device Package UB
Operating Temperature - Junction -65°C ~ 150°C
ECCN EAR99
HTSUS 8541.10.0070
Other Names 150-JANS1N5711UB/TR
Standard Package 1
Win Source Part Number 1183619-JANS1N5711UB/TR
Ultra Librarian 3D Model Ultra Librarian JANS1N5711UB/TR CAD Model

Description

Product Overview: JANS1N5711UB/TR from Microchip Technology

The JANS1N5711UB/TR is a high-reliability, radiation-hardened Schottky diode designed and manufactured by Microchip Technology. This component is specifically engineered to meet the stringent requirements of space applications, offering exceptional performance in extreme environmental conditions.

Key Features

  • Radiation Hardened: The diode is built to withstand the harsh radiation environments encountered in space. It ensures stable performance even under high radiation exposure, making it suitable for satellite and space exploration equipment.
  • High Switching Speed: With its Schottky barrier design, the JANS1N5711UB/TR provides fast switching capabilities, which is essential for power regulation and signal processing in high-speed circuits.
  • Low Forward Voltage Drop: The diode's low forward voltage drop contributes to reduced power loss and improved efficiency in electrical circuits, which is crucial for battery-powered space systems.
  • Robust Temperature Performance: Capable of operating over a wide temperature range, this diode maintains its functionality in the extreme temperatures of space.

Applications

The JANS1N5711UB/TR is an ideal choice for a variety of space-grade applications, including:

  • Power supply circuits in satellites
  • Voltage clamping and protection circuits
  • Switching power supplies
  • High-frequency inverters and converters
  • Radiation-sensitive signal processing equipment

Quality and Reliability

Microchip Technology's commitment to quality is evident in the JANS1N5711UB/TR diode. This product is manufactured under strict quality control standards and is subjected to rigorous testing to ensure it meets the required military and aerospace specifications. Customers can trust this diode to deliver reliable performance in critical missions.

The JANS1N5711UB/TR is available in a surface-mount package, which allows for compact and efficient PCB design. Its tape and reel packaging (denoted by the '/TR' suffix) facilitates automated assembly processes, ensuring consistent placement and reduced production times for high-volume applications.

With its blend of radiation tolerance, efficiency, and high-speed operation, the JANS1N5711UB/TR from Microchip Technology stands out as a superior choice for designers looking to optimize their space-grade electronic systems.

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Quantity Unit Price Ext. Price
1+ $455.9702 $455.9702
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