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JANS1N5615US

Part No JANS1N5615US
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 200V 1A A SQ-MELF / Diode 200 V 1A Surface Mount A, SQ-MELF
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Diodes>Rectifiers>Single Diodes
Mfr Microchip Technology
Series -
Package Bulk
Technology Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Supplier Device Package A, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 1 pcs
Win Source Part Number 1382396-JANS1N5615US
Ultra Librarian 3D Model Ultra Librarian JANS1N5615US CAD Model

Description

Introducing the JANS1N5615US Diode from Microchip Technology

Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions, offers a wide range of electronic components that are integral to various applications across industries. Among their extensive portfolio is the JANS1N5615US, a high-reliability, controlled avalanche silicon rectifier diode designed to meet the stringent requirements of the aerospace industry.

Key Features

  • High Voltage Capability: The JANS1N5615US is capable of withstanding high reverse voltages, ensuring stable performance under demanding conditions.
  • Controlled Avalanche Characteristics: This diode is engineered to handle sudden high energy pulses without failure, making it ideal for applications that experience transient overvoltage conditions.
  • Robust Performance: With its military-grade design, the JANS1N5615US operates reliably in extreme environments, maintaining its functionality through wide temperature ranges and in the presence of radiation.
  • Hermetic Packaging: The device is encapsulated in a hermetically sealed package, which protects it from moisture and other environmental factors that could otherwise compromise its performance.

Applications

The JANS1N5615US is designed for use in power supply circuits and is particularly suited for high-reliability applications where failure is not an option. Its robust nature makes it an excellent choice for:

  • Aerospace and defense systems
  • High-reliability commercial systems
  • Satellite and space technology
  • Power regulation modules
  • Protection circuits

Quality and Reliability

Microchip Technology is committed to providing products that meet the highest standards of quality and reliability. The JANS1N5615US is no exception, manufactured under stringent controls and tested to ensure it meets the required specifications for military and aerospace applications. It is a JAN (Joint Army/Navy) level product, which indicates compliance with the rigorous MIL-PRF-19500 military standards.

For designers and engineers looking for a reliable diode capable of withstanding harsh conditions without compromising on performance, the JANS1N5615US from Microchip Technology is an exceptional choice that delivers both durability and functionality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $84.1129 $84.1129
2+ $69.0158 $138.0316
3+ $66.8590 $200.5770
4+ $64.7023 $258.8092
5+ $62.5456 $312.7280
7+ $56.0753 $392.5271
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,085 pieces
Order Increment : 1 pcs
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