Microchip Technology's AT28C010-25FM/883
The AT28C010-25FM/883 is a high-performance, military-grade EEPROM (Electrically Erasable Programmable Read-Only Memory) device from Microchip Technology, designed to offer a reliable and durable non-volatile memory solution for a wide range of applications. With its 1 Megabit storage capacity, this EEPROM is ideal for systems that require large amounts of data storage without the need for frequent updates.
Key Features:
- Capacity: The device boasts a substantial 1 Megabit (128K x 8) of memory, providing ample space for code storage, configuration parameters, or any other data that needs to be preserved across power cycles.
- Speed: It offers fast read and write operations with a 250 ns access time, ensuring quick data retrieval and efficient performance in time-sensitive applications.
- Temperature Range: This EEPROM is designed to operate over the military temperature range of -55°C to +125°C, making it suitable for use in extreme environmental conditions.
- Interface: The parallel interface facilitates easy integration with a wide variety of microcontrollers and digital systems.
- Reliability: With its military-grade specifications, the AT28C010-25FM/883 guarantees high reliability and long-term endurance for mission-critical applications.
- Power Efficiency: It features low power consumption, which is crucial for battery-operated and power-sensitive devices.
- Package: The device comes in a hermetically sealed ceramic package, which provides additional protection against harsh conditions and enhances its durability.
Applications:
The AT28C010-25FM/883 is versatile and can be used in a variety of applications, including:
- Defense and aerospace systems
- Industrial control systems
- Telecommunications infrastructure
- Automotive electronics
- Medical devices
- Other applications that require robust memory storage
With its combination of high capacity, speed, and durability, the AT28C010-25FM/883 from Microchip Technology is a top choice for designers and engineers looking for a memory solution that can withstand the rigors of high-stakes, demanding environments.