The AT25256B-MAHL-E is a high-performance, 256K SPI Serial EEPROM from the reputable manufacturer Microchip Technology. This memory device provides 262,144 bits of serial electrically erasable and programmable read-only memory (EEPROM) organized as 32,768 words of 8 bits each. It is an ideal storage solution for applications that require data to be preserved during power-off scenarios, such as configuration settings, calibration data, and user preferences.
Key Features
- Interface: The product supports the industry-standard Serial Peripheral Interface (SPI) bus, which ensures high-speed data communication and compatibility with a wide range of microcontrollers and processors.
- Operating Voltage: It operates at a voltage range of 1.8V to 5.5V, making it suitable for various low-power and standard applications.
- Write Protection: The device includes hardware and software write protection features, including write-protect pins and write-enable instructions, to prevent accidental data overwrites and ensure data integrity.
- Endurance: The EEPROM boasts an endurance of 1 million write cycles per word, ensuring a long operational lifespan even in environments where data is frequently updated.
- Data Retention: With a data retention period of over 100 years, the AT25256B-MAHL-E guarantees the preservation of data well beyond the typical lifespan of most electronic products.
Applications
The AT25256B-MAHL-E is versatile and can be used in a variety of applications, including:
- Industrial and automotive systems that require reliable, non-volatile memory storage.
- Consumer electronics, such as smart appliances and wearable devices, where configuration data must be retained across power cycles.
- Medical devices where calibration and patient data storage is critical.
- Telecommunication systems that need to store network configurations and user settings.
With its robust design and comprehensive feature set, the Microchip Technology AT25256B-MAHL-E EEPROM is a secure and reliable choice for designers and engineers looking for a dependable non-volatile memory solution.