Product Overview: AT25256AW-10SU-2.7

The AT25256AW-10SU-2.7 is a high-performance, 256K Serial EEPROM (Electrically Erasable Programmable Read-Only Memory) designed and manufactured by Microchip Technology. This memory device provides robust storage solutions for applications requiring data retention and flexible data management.

Key Features

• Memory Size: The device boasts a 256K-bit capacity, allowing for ample storage of configuration parameters, serial numbers, calibration data, and more.
• Interface Type: It utilizes the industry-standard SPI (Serial Peripheral Interface) for communication, ensuring compatibility with a wide range of microcontrollers and processors.
• Operating Voltage: The AT25256AW-10SU-2.7 operates at a voltage range of 2.7V to 5.5V, making it suitable for low-power and battery-operated applications.
• Speed: With a maximum clock frequency of 10 MHz, data can be written and read quickly, facilitating efficient system performance.
• Temperature Range: It is designed to operate within an industrial temperature range, ensuring reliability and stable operation under extreme conditions.
• Packaging: The device comes in an 8-pin SOIC (Small Outline Integrated Circuit) package, which is ideal for space-constrained applications.

Applications

The AT25256AW-10SU-2.7 is versatile and can be used in various applications such as:

• Industrial and automotive systems
• Consumer electronics
• Medical devices
• Data logging systems
• Smart cards

Quality and Reliability

Microchip Technology is known for its commitment to quality, and the AT25256AW-10SU-2.7 is no exception. It is built with an endurance of 1 million write cycles and a data retention of 100 years, ensuring that data remains safe and reliable over an extended period.

Conclusion

With its combination of high-speed operation, large storage capacity, and robustness in various environmental conditions, the AT25256AW-10SU-2.7 from Microchip Technology is an excellent choice for system designers looking for a reliable and efficient non-volatile memory solution.