The 93C76-E/SN is a 16Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM) chip produced by Microchip Technology, a leader in smart, connected, and secure embedded control solutions. This particular EEPROM device offers a versatile storage solution for applications requiring non-volatile memory with low power consumption and high endurance.
Key Features
- Storage Capacity: The device provides 16 Kbit (2 Kbyte) of memory, which is organized as either 1024 words of 16 bits each or 2048 words of 8 bits each (93C76).
- Serial Interface: It utilizes a serial Peripheral Interface (SPI) bus, which simplifies integration into most microcontroller architectures and ensures a minimal pin count.
- Operating Voltage: The 93C76-E/SN operates within a voltage range of 4.5V to 5.5V, making it suitable for many commercial-grade applications.
- Self-Timed Erase and Write Cycles: Automatic erasure and write cycles with auto-erase before write function streamline the memory management process.
- Write Protect: Features a hardware and software write-protect capability, which provides data security and prevents accidental overwrites and erasures.
- Endurance: Offers high write endurance, typically allowing for one million erase/write cycles, ensuring long-term reliability for data storage.
- Data Retention: Data retention is rated at a minimum of 200 years, providing a durable and permanent storage solution.
- Temperature Range: The device is operational across an industrial temperature range of -40°C to +85°C.
- Package: It is available in an 8-pin SOIC (SN) package, which is widely used and easy to solder on printed circuit boards.
Applications
The 93C76-E/SN is ideal for an array of applications where reliable and durable non-volatile memory is crucial. These include, but are not limited to, industrial control systems, medical devices, smart cards, and consumer electronics. Its robustness in terms of endurance and data retention makes it an excellent choice for critical data storage in products that must withstand long-term wear and environmental challenges.
