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Manufacturer Microchip Technology
Win Source Part Number 1123485-28C04A-25/P
Manufacturer Homepage www.microchip.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 28C04A-25/P CAD Model

Description

Microchip Technology's 28C04A-25/P EEPROM

The 28C04A-25/P is a high-performance, 4 Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM) device from the renowned manufacturer, Microchip Technology. This integrated circuit is designed to provide a flexible and reliable non-volatile memory solution for a wide range of applications.

Key Features

  • Memory Size: 4 Kbit (512 x 8)
  • Interface Type: Parallel
  • Operating Voltage: 4.5V to 5.5V
  • Access Time: 250 ns
  • Temperature Range: -40°C to +85°C (Industrial)
  • Package: PDIP (Plastic Dual In-line Package)
  • Endurance: 1,000,000 erase/write cycles
  • Data Retention: 200 years

The 28C04A-25/P is specifically designed for applications that require fast access times and a durable memory that can withstand multiple erase and write cycles. The device operates across a wide voltage range and is suitable for industrial temperature ranges, ensuring reliability and stability in challenging conditions.

Applications

With its robust feature set, the 28C04A-25/P is ideal for use in a variety of applications, including:

  • Embedded control systems
  • Automotive electronics
  • Industrial automation
  • Telecommunications
  • Medical devices
  • Consumer electronics

The device's parallel interface allows for simple integration into existing systems, and its low power consumption makes it an excellent choice for battery-operated devices. The 28C04A-25/P's long data retention capability ensures that critical data is preserved for extended periods without power, making it an ideal choice for applications where data integrity is paramount.

Overall, Microchip Technology's 28C04A-25/P EEPROM offers a reliable and cost-effective solution for designers who require a non-volatile memory with high endurance, fast access times, and long-term data retention.

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