The IXDD630/IXDI630/IXDN630 high-speed gate drivers are especially well suited for driving the latest IXYS power MOSFETs and IGBTs. The IXD_630 output can source and sink 30A of peak current while producing voltage rise and fall times of less than 20ns. Internal circuitry eliminates cross conduction and current "shoot-through," and the driver is virtually immune to latch up. Under-voltage lockout (UVLO) circuitry holds the output LOW until sufficient supply voltage is applied (12.5V for the IXD_630 versions, and 9V for the IXD_630M versions). Low propagation delays and fast, matched rise and fall times make the IXD_630 family ideal for very high frequency and high-power applications.