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KF4N80F-U/PSF

Part No KF4N80F-U/PSF
Manufacturer KEC
Catalog Hard To Find
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Reference Date Code 17+
Reference case TO-220I
Manufacturer KEC
Manufacturer Homepage www.keccorp.com
Win Source Part Number 710636-KF4N80F-U/PSF
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian KF4N80F-U/PSF CAD Model

Description

The KEC KF4N80F-U/PSF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage, high-speed switching applications. This power MOSFET features a fast switching speed and low on-resistance, making it suitable for use in power supplies, motor control, and other power electronic circuits.

Applications:

  • Switch Mode Power Supplies (SMPS): Used as the primary switching element in SMPS circuits.
  • Power Factor Correction (PFC) Circuits: Improves power factor in electronic devices.
  • DC-DC Converters: Regulates voltage levels in DC-DC conversion applications.
  • Motor Control: Controls the speed and torque of electric motors.
  • Lighting Ballasts: Drives fluorescent and LED lighting systems.

Features:

  • N-Channel MOSFET: Provides efficient and reliable switching performance.
  • High Voltage: Rated for 800V drain-source voltage (VDS).
  • Low On-Resistance: Features a typical on-resistance (RDS(on)) of 2.9 Ohms, reducing power losses.
  • Fast Switching Speed: Enables high-frequency operation in switching circuits.
  • Avalanche Ruggedness: Withstands high avalanche energy, enhancing reliability.

Benefits:

  • High Efficiency: Low on-resistance minimizes power dissipation and improves overall efficiency.
  • Reliable Performance: Robust design ensures stable operation in demanding applications.
  • Fast Switching: Enables efficient operation in high-frequency switching circuits.
  • Compact Size: Reduces board space requirements in electronic devices.
  • Simplified Circuit Design: Easy to integrate into various circuit topologies.

Additional Details:

The KF4N80F-U/PSF has a continuous drain current (ID) rating of 4A. The gate-source voltage (VGS) is rated at ±30V. The transistor is typically packaged in a TO-220F, which provides good thermal performance and allows for efficient heat dissipation. The operating junction temperature range is from -55°C to +150°C. This MOSFET is designed to minimize switching losses, improving overall power conversion efficiency. It’s particularly suited for applications where both high voltage and high switching speed are required. The “U/PSF” suffix refers to the specific packaging and lead-free termination.

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