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2SD886

Part No 2SD886
Manufacturer Jiangsu Changjiang Electronics Technology Co., Ltd
Catalog Hard To Find
Description TRANSISTOR (NPN)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Jiangsu Changjiang Electronics Technology Co., Ltd
Win Source Part Number 1126673-2SD886
Manufacturer Homepage www.cj-elec.com/index.asp
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SD886 CAD Model

Description

The 2SD886 is an NPN silicon transistor designed for switching and amplifier applications. Manufactured by Jiangsu Changjiang Electronics Technology Co., Ltd, it is known for its high current capacity and reliable performance in various electronic circuits. It is commonly used in power supplies, motor drives, and audio amplifiers.

Applications

  • Power Supplies: Switching regulators and DC-DC converters.
  • Motor Drivers: Driving small to medium-sized DC motors.
  • Audio Amplifiers: Used in pre-amplifiers and power amplifiers.
  • Inverters: Low-power inverters for various applications.
  • Switching Circuits: General-purpose switching applications.

Features

  • High Current Capability: IC = 3A continuous collector current.
  • High Voltage Capability: VCEO = 60V, suitable for various voltage levels.
  • Low Saturation Voltage: Reduces power dissipation and improves efficiency.
  • Fast Switching Speed: Allows for efficient operation in switching applications.
  • NPN Transistor: Standard NPN configuration for easy integration into circuits.
  • Through-Hole Package: Typically available in a TO-126 package.

Benefits

  • Reliable Performance: Designed for consistent operation in demanding applications.
  • High Efficiency: Low saturation voltage minimizes power losses.
  • Versatile Application: Suitable for a wide range of switching and amplification tasks.
  • Easy Integration: Standard NPN configuration simplifies circuit design.
  • Cost-Effective: Provides a good balance between performance and price.

Additional Details

The 2SD886 typically comes in a TO-126 package. Its key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 60V, a collector current (IC) of 3A, and a power dissipation (PC) of around 20W. The transistor has a typical current gain (hFE) of 50-250. It is designed to operate within a temperature range of -55°C to +150°C. For optimal performance, it is essential to use appropriate heatsinking when operating the transistor at higher power levels to prevent overheating and ensure its longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
540+ $0.0926 $50.0040
1,155+ $0.0867 $100.1385
1,795+ $0.0837 $150.2415
2,575+ $0.0777 $200.0775
3,350+ $0.0747 $250.2450
4,185+ $0.0717 $300.0645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 540 pcs
Order Increment : 1 pcs
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