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IXTP1N120P

Name: IXTP1N120P
Brand: IXYS
SKU: 608593
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTP1N120P
Manufacturer	IXYS
Catalog	FETs - Single
Description	N-Channel Enhancement Mode \| MOSFET N-CH 1200V 1A TO-220
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	1200V
Id - Continuous Drain Current	1A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	20Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id	4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs	17.6nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	550pF at 25V
Power Dissipation (Maximum)	63W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1191281-IXTP1N120P
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IXTP1N120P CAD Model

Alternative Products

Description

The 1191281-IXTP1N120P is an N-channel MOSFET manufactured by IXYS.

Supply and Demand Status: Balanced
Mounting: Through-hole
Supplier Device Package: TO-220AB
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current: 1A
Maximum On-Resistance: 20Ohm @ 500mA and 10V
Gate-Source Voltage Threshold: 4.5V @ 50μA
Gate-Source Voltage: ±20V
Input Capacitance: 550pF @ 25V

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