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Same model may have multiple batches, images only for reference.
IXTP1N120P Real Image
Same model may have multiple batches, images only for reference.

IXTP1N120P

Part No IXTP1N120P
Manufacturer IXYS
Catalog FETs - Single
Description N-Channel Enhancement Mode | MOSFET N-CH 1200V 1A TO-220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1200V
Id - Continuous Drain Current 1A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 20Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 17.6nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 550pF at 25V
Power Dissipation (Maximum) 63W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191281-IXTP1N120P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP1N120P CAD Model

Description

The 1191281-IXTP1N120P is an N-channel MOSFET manufactured by IXYS.

  • Supply and Demand Status: Balanced
  • Mounting: Through-hole
  • Supplier Device Package: TO-220AB
  • Drain-Source Breakdown Voltage: 1200V
  • Continuous Drain Current: 1A
  • Maximum On-Resistance: 20Ohm @ 500mA and 10V
  • Gate-Source Voltage Threshold: 4.5V @ 50μA
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 550pF @ 25V

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