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Same model may have multiple batches, images only for reference.
IXTP160N085T Real Image
Same model may have multiple batches, images only for reference.

IXTP160N085T

Part No IXTP160N085T
Manufacturer IXYS
Catalog FETs - Single
Description Trench Gate Power MOSFET | MOSFET N-CH 85V 160A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 85V
Id - Continuous Drain Current 160A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 164nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 6400pF at 25V
Power Dissipation (Maximum) 360W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191278-IXTP160N085T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP160N085T CAD Model

Description

The IXYS IXTP160N085T MOSFET from IXYS is a high power N-channel transistor designed for through hole mounting.

  • Drain-Source Breakdown Voltage: 85V
  • Continuous Drain Current: 160A
  • Maximum On-Resistance: 6mOhm @ 50A, 10V
  • Gate-Source Voltage Range: ±20V
  • Maximum Gate-Source Threshold Voltage: 4V @ 1mA
  • Package: TO-220AB
  • Power Dissipation: up to 360W
  • Input Capacitance: 6400pF @ 25V
  • Gate Charge: 164nC @ 10V
  • Obsolete product: with limited supply and demand status.
  • Suitable for use: in applications that require high power and low on-resistance.

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