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Same model may have multiple batches, images only for reference.
IXTK110N20L2 Real Image
Same model may have multiple batches, images only for reference.

IXTK110N20L2

Part No IXTK110N20L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 110A TO264 / N-Channel 200 V 110A (Tc) 960W (Tc) Through Hole TO-264 (IXTK)
Datasheet
IXTK110N20L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 500 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 23000 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (IXTK)
Package / Case TO-264-3, TO-264AA
Base Product Number IXTK110
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1029585-IXTK110N20L2
Ultra Librarian 3D Model Ultra Librarian IXTK110N20L2 CAD Model

Description

The IXTK110N20L2 is an N-channel MOSFET transistor from IXYS.

  • Maximum Drain-Source Voltage: 200V
  • Maximum Continuous Drain Current: 110A
  • Package: TO-264-3
  • Operating Temperature Range: -55°C to 150°C
  • Ideal for: power supplies and motor control applications

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