IXTH50P085 Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 85V
Id - Continuous Drain Current 50A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 55mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 150nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4200pF at 25V
Power Dissipation (Maximum) 300W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level Not Applicable
Win Source Part Number 1191258-IXTH50P085
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH50P085 CAD Model

Description

The IXYS IXTH50P085 is a P-channel MOSFET transistor manufactured by IXYS.

  • Drain-Source Breakdown Voltage: 85V
  • Continuous Drain Current: 50A
  • Maximum On-Resistance: 55mOhm @ 25A and 10V
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 4200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature Range: -55°C to 150°C
  • Package: TO-247 package
  • Status: obsolete
  • Suitable for: use in various applications such as power supplies, motor drives, and lighting systems

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