IXTH48N65X2 Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 650V
Id - Continuous Drain Current 48A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 68mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 77nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 4420pF at 25V
Power Dissipation (Maximum) 660W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191257-IXTH48N65X2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTH48N65X2 CAD Model

Description

The 1191257-IXTH48N65X2 from IXYS is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 650V and a continuous drain current of 48A.

  • On-State Resistance (Max) @ 24A, 10V: 68mOhm
  • Gate-Source Voltage Threshold @ 4mA: 4.5V
  • Gate Charge @ 10V: 77nC
  • Package: TO-247-3
  • Power Dissipation: Up to 660W
  • Suitable for: High-frequency power supplies, motor control, and DC-DC converters
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $9.9648 $59.7888
14+ $8.1762 $114.4668
22+ $7.9208 $174.2576
30+ $7.6652 $229.9560
38+ $7.4097 $281.5686
51+ $6.6432 $338.8032
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 2,950 pieces
MOQ: 6 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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