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IXTH48N65X2

Name: IXTH48N65X2
Brand: IXYS
SKU: 608569
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTH48N65X2
Manufacturer	IXYS
Catalog	FETs - Single
Description	Preliminary Technical Information \| MOSFET N-CH 650V 48A TO-247
Sample
Rohs State
ECAD Module
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Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	650V
Id - Continuous Drain Current	48A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	68mOhm at 24A, 10V
Gate Source Voltage(th) (Maximum) at Id	4.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs	77nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	4420pF at 25V
Power Dissipation (Maximum)	660W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-247
Manufacturer Package	TO-247-3
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Win Source Part Number	1191257-IXTH48N65X2
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTH48N65X2 CAD Model

Description

The 1191257-IXTH48N65X2 from IXYS is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 650V and a continuous drain current of 48A.

On-State Resistance (Max) @ 24A, 10V: 68mOhm
Gate-Source Voltage Threshold @ 4mA: 4.5V
Gate Charge @ 10V: 77nC
Package: TO-247-3
Power Dissipation: Up to 660W
Suitable for: High-frequency power supplies, motor control, and DC-DC converters
Supply and Demand Status: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
6+	$8.8971	$53.3826
14+	$7.3002	$102.2028
22+	$7.0721	$155.5862
30+	$6.8439	$205.3170
38+	$6.6158	$251.4004
51+	$5.9314	$302.5014

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,950 pieces

MOQ: 6 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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