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Same model may have multiple batches, images only for reference.
IXSH25N120A Real Image
Same model may have multiple batches, images only for reference.

IXSH25N120A

Part No IXSH25N120A
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 50A 200W TO247AD
Datasheet
IXSH25N120A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 4V @ 15V, 25A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 9.6mJ (off)
Input Type Standard
Gate Charge 120nC
Turn-on and Turn-off delay time 100ns/450ns
Testing Conditions 960V, 25A, 18 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049698-IXSH25N120A
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH25N120A CAD Model

Description

The IXSH25N120A is an IGBT transistor from IXYS.

  • Mounting Type: through-hole
  • Package/Case: TO-247AD (IXSH)
  • Maximum Current Collector: 50A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Power Dissipation: 200W
  • Pulsed Collector Current: 80A
  • Collector-Emitter Saturation Voltage (Max): 4V @ 15V, 25A
  • Total Switching Energy (Ets): 9.6mJ (off)
  • Turn-On and Turn-Off Delay Time: 100ns/450ns
  • Testing Conditions: 960V, 25A, 18 Ohm, 15V
  • Gate Charge: 120nC
  • Status: obsolete (EOL)
  • Category: IGBT
  • Product Type: discrete semiconductor product

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