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Same model may have multiple batches, images only for reference.
IXKC20N60C Real Image
Same model may have multiple batches, images only for reference.

IXKC20N60C

Part No IXKC20N60C
Manufacturer IXYS
Catalog FETs - Single
Description CoolMOS Power MOSFET in ISOPLUS220 Package | MOSFET N-CH 600V 15A ISOPLUS220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 15A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 190mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 3.9V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 114nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package ISOPLUS220
Manufacturer Package ISOPLUS220
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191217-IXKC20N60C
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXKC20N60C CAD Model

Description

The IXKC20N60C is an N-channel MOSFET designed for high voltage and high-speed switching applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 15A
  • Rds On (Maximum) @ ID, VGS: 190mOhm @ 16A, 10V
  • Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3.9V @ 1mA
  • Mounting Type: Through-Hole
  • Package: ISOPLUS220
  • Temperature Range: -55°C to 150°C
  • Input Capacitance: 2400pF @ 25V
  • Gate Charge: 114nC @ 10V

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