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Same model may have multiple batches, images only for reference.
IXGR32N60CD1 Real Image
Same model may have multiple batches, images only for reference.

IXGR32N60CD1

Part No IXGR32N60CD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 45A 140W ISOPLUS247
Datasheet
IXGR32N60CD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 45A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 32A
Maximum Power Dissipation 140W
Total Switching Energy(Ets) 320μJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 25ns/85ns
Testing Conditions 480V, 32A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package ISOPLUS247
Win Source Part Number 1049674-IXGR32N60CD1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXGR32N60CD1 CAD Model

Description

The IXGR32N60CD1 is an obsolete (EOL) IGBT type discrete semiconductor product from IXYS.

  • Packaging: Tube/rail
  • Mounting: Through-hole
  • Reverse Recovery Time (trr): 25ns
  • Gate Charge: 110nC
  • Maximum Collector-Emitter Breakdown Voltage (VCEO): 600V
  • Maximum Current Collector: 45A
  • Collector-Emitter Saturation Voltage (Max): 2.7V @ 15V, 32A
  • Total Switching Energy (Ets): 320μJ (off)
  • Turn-On and Turn-Off Delay Time: 25ns/85ns
  • Testing Conditions: 480V, 32A, 4.7 Ohm, 15V

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