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Same model may have multiple batches, images only for reference.
IXGQ50N60C4D1 Real Image
Same model may have multiple batches, images only for reference.

IXGQ50N60C4D1

Part No IXGQ50N60C4D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 90A 300W TO3P
Datasheet
IXGQ50N60C4D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 90A
Pulsed Collector Current 220A
Collector-emitter saturation voltage(Max) 2.3V @ 15V, 36A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 950μJ (on), 840μJ (off)
Input Type Standard
Gate Charge 113nC
Turn-on and Turn-off delay time 40ns/270ns
Testing Conditions 400V, 36A, 10 Ohm, 15V
Reverse Recovery Time (trr) 25ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Win Source Part Number 1049671-IXGQ50N60C4D1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGQ50N60C4D1 CAD Model

Description

IXYS produces the IXGQ50N60C4D1, a PT IGBT type with a collector-emitter saturation voltage of 2.3V @ 15V and 36A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 300W
  • Total Switching Energy: 950μJ (on) and 840μJ (off)
  • Turn-On and Turn-Off Delay Time: 40ns/270ns
  • Testing Conditions: 400V, 36A, 10 Ohm, and 15V
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)

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