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Same model may have multiple batches, images only for reference.
IXGH40N120B2D1 Real Image
Same model may have multiple batches, images only for reference.

IXGH40N120B2D1

Part No IXGH40N120B2D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 75A 380W TO247
Datasheet
IXGH40N120B2D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 75A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 3.5V @ 15V, 40A
Maximum Power Dissipation 380W
Total Switching Energy(Ets) 4.5mJ (on), 3mJ (off)
Input Type Standard
Gate Charge 138nC
Turn-on and Turn-off delay time 21ns/290ns
Testing Conditions 960V, 40A, 2 Ohm, 15V
Reverse Recovery Time (trr) 100ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049621-IXGH40N120B2D1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH40N120B2D1 CAD Model

Description

The IXGH40N120B2D1 is a through-hole IGBT transistor manufactured by IXYS.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 75A
  • IGBT Type: PT
  • Input Type: Standard
  • Gate Charge: 138nC
  • Reverse Recovery Time (trr): 100ns
  • Total Switching Energy(Ets): 4.5mJ (on), 3mJ (off)
  • Collector-Emitter Saturation Voltage(Max): 3.5V @ 15V, 40A
  • Turn-On and Turn-Off Delay Time: 21ns/290ns
  • Package: TO-247AD (IXGH)
  • Maximum Power Dissipation: 380W
  • Suitable for: Discrete Semiconductor Products

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