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IXGH32N120A3

Part No IXGH32N120A3
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 75A 300W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 75A
Pulsed Collector Current 230A
Collector-emitter saturation voltage(Max) 2.35V @ 15V, 32A
Maximum Power Dissipation 300W
Input Type Standard
Gate Charge 89nC
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049606-IXGH32N120A3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH32N120A3 CAD Model

Description

The IXYS 1049606-IXGH32N120A3 is a PT type IGBT transistor that has a maximum collector current of 75A and a collector-emitter breakdown voltage of 1200V.

  • Package: TO-247AD (IXGH)
  • Maximum Power Dissipation: 300W
  • Gate Charge: 89nC
  • Collector-Emitter Saturation Voltage: 2.35V @ 15V, 32A
  • Operating Temperature: -55°C to 150°C (TJ)
  • Packaging: Tube/Rail
  • Category: Discrete Semiconductor Product
  • Supply and Demand Status: Sufficient

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