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Same model may have multiple batches, images only for reference.
IXGH32N100A3 Real Image
Same model may have multiple batches, images only for reference.

IXGH32N100A3

Part No IXGH32N100A3
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1000V 75A 300W TO247AD
Datasheet
IXGH32N100A3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 1000V
Maximum Current Collector 75A
Pulsed Collector Current 200A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 32A
Maximum Power Dissipation 300W
Total Switching Energy(Ets) 2.6mJ (on), 9.5mJ (off)
Input Type Standard
Gate Charge 87nC
Turn-on and Turn-off delay time 24ns/385ns
Testing Conditions 800V, 32A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXGH)
Win Source Part Number 1049605-IXGH32N100A3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXGH32N100A3 CAD Model

Description

IXYS's Through Hole PT IGBT Type with a maximum collector-emitter breakdown voltage of 1000V, a maximum current collector of 75A, and a maximum power dissipation of 300W, is a highly efficient and reliable component.

  • It: is designed to operate in a temperature range of -55°C to 150°C (TJ).
  • This component: is perfect for use in discrete semiconductor products.

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