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Same model may have multiple batches, images only for reference.
IXGA20N120B3-TRL Real Image
Same model may have multiple batches, images only for reference.

IXGA20N120B3-TRL

Part No IXGA20N120B3-TRL
Manufacturer IXYS
Catalog IGBTs - Single
Description IXGA20N120B3 TRL / IGBT PT 1200 V 36 A 180 W Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series GenX3™
Package Tape & Reel (TR)
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 36 A
Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 16A
Power - Max 180 W
Switching Energy 920µJ (on), 560µJ (off)
Input Type Standard
Gate Charge 51 nC
Td (on/off) @ 25°C 16ns/150ns
Test Condition 600V, 16A, 15Ohm, 15V
Reverse Recovery Time (trr) 31 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2Pak)
Base Product Number IXGA20
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 238-IXGA20N120B3-TRLTR
Standard Package 800
Win Source Part Number 1001226-IXGA20N120B3-TRL
Ultra Librarian 3D Model Ultra Librarian IXGA20N120B3-TRL CAD Model

Description

The IXYS IXGA20N120B3-TRL is a single IGBT transistor designed for use in discrete semiconductor products.

  • Series: GenX3™
  • Power: 180 W
  • Reverse Recovery Time: 31 ns
  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 36 A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
  • Switching Energy: 920μJ (on), 560μJ (off)
  • Gate Charge: 51 nC
  • Application: IGBTs - Single

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