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Same model may have multiple batches, images only for reference.
IXFN300N10P Real Image
Same model may have multiple batches, images only for reference.

IXFN300N10P

Part No IXFN300N10P
Manufacturer IXYS
Catalog FETs - Single
Description Polar Power MOSFET HiPerFET | MOSFET N-CH 100V 295A SOT-227
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 295A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 5.5mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs 279nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 23000pF at 25V
Power Dissipation (Maximum) 1070W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Chassis Mount
Supplier Device Package SOT-227B
Manufacturer Package SOT-227-4, miniBLOC
Manufacturer Pack Quantity 10
MSL Level 1 (Unlimited)
Win Source Part Number 1191114-IXFN300N10P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFN300N10P CAD Model

Description

The IXYS IXFN300N10P is a high-performance N-channel MOSFET transistor that features a drain-source breakdown voltage of 100V and a continuous drain current of 295A.

  • Product Name: IXFN300N10P
  • Manufacturer: IXYS
  • Transistor Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 295A
  • On-State Resistance: 5.5mOhm maximum
  • Gate-Source Voltage: 5V @ 8mA
  • Package: SOT-227B
  • Mounting Type: Chassis
  • Application: Discrete semiconductor product applications

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