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IXFK90N20

Name: IXFK90N20
Brand: IXYS
SKU: 608418
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXFK90N20
Manufacturer	IXYS
Catalog	FETs - Single
Description	HiPerFET Power MOSFETs \| MOSFET N-CH 200V 90A TO-264AA
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	90A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	23mOhm at 45A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 8mA
Gate Charge (Qg) (Maximum) at Vgs	380nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	9000pF at 25V
Power Dissipation (Maximum)	500W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-264AA (IXFK)
Manufacturer Package	TO-264-3, TO-264AA
Manufacturer Pack Quantity	25
MSL Level	1 (Unlimited)
Win Source Part Number	1191106-IXFK90N20
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXFK90N20 CAD Model

Alternative Products

Description

The IXYS IXFK90N20 is a limited supply electronic component.

Win Source Part Number: 1191106-IXFK90N20
Technology: MOSFET
Polarity: N-channel
Package: TO-264AA (IXFK)
Maximum Power Dissipation: 500W
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 90A
Rds On (Maximum) @ Id, Vgs: 23mOhm @ 45A, 10V
Gate source voltage(th) (Maximum) @ Id: 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 380nC @ 10V
Application: suitable for various electronic applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
3+	$24.9796	$74.9388
6+	$20.4962	$122.9772
9+	$19.8558	$178.7022
13+	$19.2152	$249.7976
16+	$18.5747	$297.1952
21+	$16.6532	$349.7172

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,000 pieces

MOQ: 3 pcs

Order Increment : 1 pcs

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