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Same model may have multiple batches, images only for reference.
IXFK24N80P Real Image
Same model may have multiple batches, images only for reference.

IXFK24N80P

Part No IXFK24N80P
Manufacturer IXYS
Catalog FETs - Single
Description PolarHV HiPerFET Power MOSFET | MOSFET N-CH 800V 24A TO-264
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 800V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 400mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 105nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 7200pF at 25V
Power Dissipation (Maximum) 650W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1191088-IXFK24N80P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXFK24N80P CAD Model

Description

The IXYS IXFK24N80P is an N-channel MOSFET transistor designed to be used in various electronic applications.

  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 24A
  • Maximum Power Dissipation: 650W
  • Maximum Rds On: 400mOhm @ 12A and 10V
  • Package: TO-264AA (IXFK)
  • Mounting Style: Through-Hole
  • Gate-Source Voltage(th): 5V @ 4mA
  • Maximum Gate Charge: 105nC @ 10V
  • Input Capacitance: 7200pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Category: Discrete Semiconductor Products
  • Packaging: Tube
  • Quantity Per Package: 25
  • Supply and Demand Status: Balanced

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