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IXFK24N100Q3

Part No IXFK24N100Q3
Manufacturer IXYS
Catalog FETs - Single
Description Advance Technical Information | MOSFET N-CH 1000V 24A TO-264
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 1000V
Id - Continuous Drain Current 24A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 440mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 6.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 7200pF at 25V
Power Dissipation (Maximum) 1000W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-264AA (IXFK)
Manufacturer Package TO-264-3, TO-264AA
Manufacturer Pack Quantity 25
MSL Level 1 (Unlimited)
Win Source Part Number 1191087-IXFK24N100Q3
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXFK24N100Q3 CAD Model

Description

The IXYS MOSFET is a high-performance transistor with a N-Channel polarity manufactured by IXYS.

  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 1000V
  • Power Dissipation: 1000W
  • Continuous Drain Current: 24A
  • Rds On: 440mOhm @ 12A, 10V
  • Gate Charge: 140nC @ 10V
  • Input Capacitance: 7200pF @ 25V
  • Package: TO-264AA (IXFK)
  • Operating Temperature: -55°C to 150°C
  • Ideal for: Use in Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $77.1940 $77.1940
2+ $63.3387 $126.6774
3+ $61.3594 $184.0782
4+ $59.3800 $237.5200
5+ $57.4007 $287.0035
6+ $51.4627 $308.7762
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30 pieces
Order Increment : 1 pcs
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