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Same model may have multiple batches, images only for reference.
IXBF40N160
Same model may have multiple batches, images only for reference.

IXBF40N160

Part No IXBF40N160
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1600V 28A 250W I4PAC  /  IGBT 1600 V 28 A 250 W Through Hole ISOPLUS i4-PAC™
Datasheet
IXBF40N160 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series BIMOSFET™
Package Tube
Voltage - Collector Emitter Breakdown (Max) 1600 V
Current - Collector (Ic) (Max) 28 A
Vce(on) (Max) @ Vge, Ic 7.1V @ 15V, 20A
Power - Max 250 W
Input Type Standard
Gate Charge 130 nC
Test Condition 960V, 25A, 22Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case i4-Pac™-5 (3 Leads)
Supplier Device Package ISOPLUS i4-PAC™
Base Product Number IXBF40
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1210257-IXBF40N160
Ultra Librarian 3D Model Ultra Librarian IXBF40N160 CAD Model

Description

The IXBF40N160 is a BIMOSFET™ IGBT transistor with a maximum power of 250 W.

  • Voltage - Collector Emitter Breakdown (Max): 1600 V
  • Current - Collector (Ic) (Max): 28 A
  • Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
  • Input Type: Standard
  • Gate Charge: 130 nC
  • Mounting Type: Through Hole
  • Package/Case: i4-Pac™-5 (3 Leads)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Manufacturer: IXYS

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