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Same model may have multiple batches, images only for reference.
IS64WV12816EDBLL-10CTLA3 Real Image
Same model may have multiple batches, images only for reference.

IS64WV12816EDBLL-10CTLA3

Part No IS64WV12816EDBLL-10CTLA3
Manufacturer ISSI, Integrated Silicon Solution Inc
Catalog RAM
Description IC SRAM 2MBIT PARALLEL 44TSOP II / SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 10 ns 44-TSOP II
Datasheet
IS64WV12816EDBLL-10CTLA3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr ISSI, Integrated Silicon Solution Inc
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 2Mb (128K x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.4V ~ 3.6V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting SMD (SMT)
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number IS64WV12816
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 135
Win Source Part Number 1172649-IS64WV12816EDBLL-10CTLA3
Ultra Librarian 3D Model Ultra Librarian IS64WV12816EDBLL-10CTLA3 CAD Model

Description

The IS64WV12816EDBLL-10CTLA3 is a 2Mb (128K x 16) SRAM - Asynchronous memory with a voltage supply range of 2.4V to 3.6V. IS64WV12816EDBLL-10CTLA3 is designed by .

  • Memory Size: 2Mb (128K x 16)
  • Memory Type: SRAM - Asynchronous
  • Voltage Supply: 2.4V to 3.6V
  • Access Time: 10ns
  • Write Cycle Time: 10ns
  • Memory Interface: Parallel
  • Package: 44-TSOP II
  • Operating Temperature: -40°C to 125°C (TA)
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Category: Integrated Circuit (IC) - Memory

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