The 3N200 is an N-Channel enhancement-mode MOSFET manufactured by Intersil Corporation. This transistor is designed for high-speed switching and amplification applications. Its characteristics make it suitable for use in various analog and digital circuits.

Applications

• High-speed switching circuits
• Amplifiers for RF and video signals
• Analog switches
• Chopper circuits
• Portable communication devices

Features

• N-Channel enhancement mode MOSFET
• High transconductance
• Low input capacitance
• Fast switching speed
• High input impedance

Benefits

• Enables efficient high-speed switching
• Provides excellent gain in amplifier circuits
• Minimizes signal distortion due to low capacitance
• Reduces power consumption in switching applications
• Simplifies circuit design with high input impedance

Additional Details

The 3N200 MOSFET has a gate-source breakdown voltage typically around 20V. The drain-source breakdown voltage is typically 30V. The continuous drain current is around 30mA. The power dissipation is about 200mW. It's commonly available in TO-92 packaging. This MOSFET's low on-resistance makes it efficient in switching applications. The fast switching speed makes it desirable for high frequency operations. Its high input impedance ensures minimal loading on the driving circuit.