The IRF7626TRPBF is a HEXFET® power MOSFET from International Rectifier (now Infineon Technologies), optimized for high-efficiency power conversion in space-constrained applications. This device is characterized by its low on-state resistance (Rds(on)) and gate charge (Qg), minimizing both conduction and switching losses. It is available in a small TSSOP-8 package offering good thermal performance.
Applications:
- Synchronous rectification in DC-DC converters
- Load switching
- Power management in portable devices (smartphones, tablets)
- Battery charging circuits
- Power supplies for small electronics
Features:
- Low on-resistance (Rds(on))
- Low gate charge (Qg)
- TSSOP-8 package for compact size
- Logic-level gate drive
- Pb-free and RoHS compliant
Benefits:
- Reduces conduction losses, leading to higher efficiency
- Enables faster switching speeds, minimizing switching losses
- Suitable for high-density and portable designs
- Simplifies gate drive requirements
- Environmentally friendly
Technical Specifications:
The IRF7626TRPBF features a drain-source voltage (Vds) rating of 30V. The on-resistance (Rds(on)) is very low, contributing to efficiency. The gate charge (Qg) is minimized for faster switching. It's housed in a TSSOP-8 package. Refer to the Infineon Technologies datasheet for comprehensive electrical, thermal, and package specifications.
