The IRF2804STR is a power MOSFET manufactured by International Rectifier (now Infineon Technologies). It is an N-channel MOSFET designed for high current, high-speed switching applications. It features a low on-resistance (RDS(on)) and is optimized for efficient power conversion and motor control.

Applications

• DC-DC converters
• Motor control
• Power inverters
• Synchronous rectification
• High-frequency switching applications

Features

• N-Channel MOSFET
• Voltage Rating: 40V
• Continuous Drain Current: 75A
• Low On-Resistance (RDS(on))
• Fast Switching Speed
• Avalanche Rated
• Surface Mount Package (D2PAK)

Benefits

• High Efficiency: Low RDS(on) minimizes power losses.
• High Current Capability: Handles high current loads efficiently.
• Fast Switching: Enables high-frequency operation in switching applications.
• Robust Design: Avalanche rating provides protection against voltage transients.
• Easy to Mount: Surface mount package simplifies assembly.

Additional Details

The IRF2804STR uses advanced HEXFET® power MOSFET technology to achieve low on-resistance and fast switching speeds. The device is designed to withstand high operating temperatures and is commonly used in demanding power applications. The gate threshold voltage is typically between 2V and 4V. It is typically mounted on a heatsink to facilitate heat dissipation and maintain optimal performance.