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Manufacturer Intel
Category Integrated Circuits(ICs)
Family Memory
Win Source Part Number 182588-RD28F1604C3B90
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RD28F1604C3B90 CAD Model

Description

The Intel RD28F1604C3B90 is a 16-Mbit (16,777,216 bits) Flash memory device organized as 2,097,152 words x 8 bits or 1,048,576 words x 16 bits. This high-performance memory component is designed for embedded systems requiring non-volatile storage and rapid access times.

Applications

  • Embedded systems
  • Networking equipment
  • Industrial control systems
  • Telecommunications devices
  • Automotive systems

Features

  • High Density: 16-Mbit storage capacity.
  • CMOS Technology: Low power consumption.
  • x8/x16 Configurable: Flexible data bus width.
  • Asynchronous Read Operation: Fast data retrieval.
  • Erase Suspend Capability: Allows interruption of erase operations for read operations.
  • Program Suspend Capability: Allows interruption of program operations for read operations.
  • Enhanced Endurance: Designed for a high number of program/erase cycles.
  • Sector Protection: Hardware locking of specific memory regions.

Benefits

  • Reliable Data Storage: Non-volatile memory retains data even when power is off.
  • Fast Access Times: Enables quick boot-up and program execution.
  • Low Power Consumption: Extends battery life in portable devices.
  • Flexible Integration: Configurable bus width allows adaptation to different system architectures.
  • Robust Performance: Withstands harsh environmental conditions.

Additional Details

The RD28F1604C3B90 utilizes advanced CMOS technology to achieve low power consumption while maintaining high performance. It supports both x8 and x16 bus widths, making it adaptable to various system designs. The device also features sector protection, allowing critical memory regions to be hardware-locked, preventing accidental overwrites. Erase and program suspend capabilities allow the system to perform read operations even during erase or program cycles. The endurance of the flash memory is designed for a high number of program/erase cycles, ensuring reliability over the lifespan of the embedded system. The operating voltage typically ranges from 2.7V to 3.6V, making it suitable for a wide range of embedded applications.

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