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Same model may have multiple batches, images only for reference.
SKW20N60FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SKW20N60FKSA1

Part No SKW20N60FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 40A 179W TO247-3
Datasheet
SKW20N60FKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 40A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 20A
Maximum Power Dissipation 179W
Total Switching Energy(Ets) 440μJ (on), 330μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 36ns/225ns
Testing Conditions 400V, 20A, 16 Ohm, 15V
Reverse Recovery Time (trr) 300ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1096705-SKW20N60FKSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 240
Ultra Librarian 3D Model Ultra Librarian SKW20N60FKSA1 CAD Model

Description

The Infineon Technologies 425888 is an obsolete (EOL) Discrete Semiconductor Product.

  • Maximum Current Collector: 40A
  • VCEO maximum collector-emitter breakdown voltage: 600V
  • Maximum Power Dissipation: 179W
  • Package: PG-TO247-3
  • Mounting: Through-Hole Technology
  • Reverse Recovery Time (trr): 300ns
  • Collector-Emitter Saturation Voltage (Max): 2.4V @ 15V, 20A
  • Total Switching Energy(Ets): 440μJ (on), 330μJ (off)
  • Suitable for: Discrete Semiconductor Products

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