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Same model may have multiple batches, images only for reference.
SKW15N120FKSA1 Real Image
Same model may have multiple batches, images only for reference.

SKW15N120FKSA1

Part No SKW15N120FKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SKW15N120FKSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tube
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 52 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Power - Max 198 W
Switching Energy 1.9mJ
Input Type Standard
Gate Charge 130 nC
Td (on/off) @ 25°C 18ns/580ns
Test Condition 800V, 15A, 33Ohm, 15V
Reverse Recovery Time (trr) 65 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-1
Base Product Number SKW15N
Other Names SP000012570,SKW15N120,SKW15N120
Standard Package 240
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277431-SKW15N120FKSA1
Ultra Librarian 3D Model Ultra Librarian SKW15N120FKSA1 CAD Model

Description

The SKW15N120FKSA1 is a NPT IGBT transistor in a TO-247-3 package from Infineon Technologies.

  • Designed for: Use in high power applications with a maximum power rating of 198 W.
  • Reverse Recovery Time: 65 ns
  • Voltage Breakdown Rating: 1200 V
  • Maximum Collector Current: 30 A
  • Maximum Collector Pulsed Current: 52 A
  • Vce(on): 3.6V @ 15V and 15A
  • Switching Energy: 1.9mJ
  • Gate Charge: 130 nC
  • Td (on/off) @ 25°C: 18ns/580ns
  • Suitable for: Use in through hole mounting applications.

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