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SKB02N60E3266ATMA1

Part No SKB02N60E3266ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 6 A
Current - Collector Pulsed (Icm) 12 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2A
Power - Max 30 W
Switching Energy 64µJ
Input Type Standard
Gate Charge 14 nC
Td (on/off) @ 25°C 20ns/259ns
Test Condition 400V, 2A, 118Ohm, 15V
Reverse Recovery Time (trr) 130 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number SKB02N
Other Names SKB02N60 E3266,SKB02N60 E3266,2156-SKB02N60E3266ATMA1,INFINFSKB02N60E3266ATMA1,SP000012417,SKB02N60E3266ATMA1TR
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277433-SKB02N60E3266ATMA1
Ultra Librarian 3D Model Ultra Librarian SKB02N60E3266ATMA1 CAD Model

Description

The Infineon Technologies SKB02N60E3266ATMA1 is an NPT type IGBT transistor that has a reverse recovery time of 130 ns and a maximum collector current of 6 A.

  • Reverse Recovery Time: 130 ns
  • Maximum Collector Current: 6 A
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Recommended for: Use in electronic devices that require high performance.

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