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Same model may have multiple batches, images only for reference.
SIGC12T60NCX1SA4
Same model may have multiple batches, images only for reference.

SIGC12T60NCX1SA4

Part No SIGC12T60NCX1SA4
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SIGC12T60NCX1SA4 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 10 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 10A
Input Type Standard
Td (on/off) @ 25°C 21ns/110ns
Test Condition 300V, 10A, 27Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Die
Other Names 448-SIGC12T60NCX1SA4,SP000309911
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN OBSOLETE
Win Source Part Number 1277472-SIGC12T60NCX1SA4
Ultra Librarian 3D Model Ultra Librarian SIGC12T60NCX1SA4 CAD Model

Description

The Infineon Technologies SIGC12T60NCX1SA4 is a single IGBT transistor with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 10A.

  • Mounting Technology: SMD (SMT)
  • Package/Case: Die
  • IGBT Type: NPT
  • Switching Energy: Not specified
  • Input Type: Standard
  • Test Condition: 300V, 10A, 27Ohm, 15V

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