The SIDC81D120H6X1SA2 is a silicon carbide (SiC) diode manufactured by Infineon Technologies. It is a part of the CoolSiC™ Schottky diode family, offering enhanced efficiency and performance compared to traditional silicon diodes, especially in high-voltage, high-frequency applications.

Applications

• Power Factor Correction (PFC) circuits
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• Electric Vehicle (EV) Chargers
• Industrial Power Supplies

Features

• 1200V Blocking Voltage
• 8A Continuous Forward Current
• Low Forward Voltage Drop
• Temperature Independent Switching Behavior
• High Surge Current Capability
• CoolSiC™ Schottky Diode Technology
• RoHS Compliant

Benefits

• Increased system efficiency due to low forward voltage drop and fast switching.
• Improved system reliability with a high surge current capability.
• Reduced cooling requirements due to low power dissipation.
• Enables higher power density designs.
• Simplified design with temperature-independent switching characteristics.

Specifications

The SIDC81D120H6X1SA2 features a repetitive peak reverse voltage (VRRM) of 1200V and a continuous forward current (IF) of 8A. The typical forward voltage drop (VF) is around 1.5V at the rated forward current and a junction temperature of 25°C. It has a surge forward current (IFSM) of 40A. The operating junction temperature range is -55°C to +175°C. The device comes in a ThinPAK 8x8 package, which allows for excellent thermal management. Its negligible reverse recovery charge (Qrr) results in very fast switching speeds and reduced switching losses.