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Same model may have multiple batches, images only for reference.
SGP06N60XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SGP06N60XKSA1

Part No SGP06N60XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 12A 68W TO220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 12A
Pulsed Collector Current 24A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 6A
Maximum Power Dissipation 68W
Total Switching Energy(Ets) 215μJ
Input Type Standard
Gate Charge 32nC
Turn-on and Turn-off delay time 25ns/220ns
Testing Conditions 400V, 6A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 1095608-SGP06N60XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SGP06N60XKSA1 CAD Model

Description

The Infineon Technologies SGP06N60XKSA1 is an insulated gate bipolar transistor (IGBT) type NPT that is mounted through hole and is packaged on a PG-TO220-3 case.

  • Maximum Collector Current: 12A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 68W
  • Operating Temperature Range: -55°C to 150°C
  • Drain-Source Saturation Voltage (max): 2.4V @ 15V and 6A
  • Total Switching Energy (Ets): 215μJ
  • Turn-On and Turn-Off Delay Time: 25ns/220ns
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
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