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Same model may have multiple batches, images only for reference.
SGI02N120XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

SGI02N120XKSA1

Part No SGI02N120XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 6.2A 62W TO262-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series -
Package Tube
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 6.2 A
Current - Collector Pulsed (Icm) 9.6 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
Power - Max 62 W
Switching Energy 220µJ
Input Type Standard
Gate Charge 11 nC
Td (on/off) @ 25°C 23ns/260ns
Test Condition 800V, 2A, 91Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package PG-TO262-3-1
Base Product Number SGI02N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1379757-SGI02N120XKSA1
Ultra Librarian 3D Model Ultra Librarian SGI02N120XKSA1 CAD Model

Description

The SGI02N120XKSA1 is a single IGBT transistor designed for high power applications.

  • Collector Current (Max): 6.2A
  • Collector-Emitter Breakdown Voltage: 1200V
  • Operating Temperature: -55°C to 150°C
  • Switching Energy: 220µJ
  • Gate Charge: 11nC
  • IGBT Type: NPT
  • Input Type: Standard
  • Package: TO-262-3

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