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Same model may have multiple batches, images only for reference.
SGB30N60 Real Image
Same model may have multiple batches, images only for reference.

SGB30N60

Part No SGB30N60
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 41A, 600V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 41 A
Current - Collector Pulsed (Icm) 112 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Power - Max 250 W
Switching Energy 1.29mJ
Input Type Standard
Gate Charge 140 nC
Td (on/off) @ 25°C 44ns/291ns
Test Condition 400V, 30A, 11Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number SGB30
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 665780-SGB30N60
Ultra Librarian 3D Model Ultra Librarian SGB30N60 CAD Model

Description

The 665780-SGB30N60 is a single IGBT transistor designed for high power applications.

  • Maximum Power: 250W
  • Voltage Breakdown: 600V
  • Maximum Collector Current: 41A
  • Pulsed Collector Current: 112A
  • Vce(on) Voltage: 2.4V @ Vge=15V, Ic=30A
  • Gate Charge: 140nC
  • Package: TO-263-3 (D²Pak)
  • Manufacturer: Infineon Technologies
  • Status: Active

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