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Same model may have multiple batches, images only for reference.
SGB02N60ATMA1 Real Image
Same model may have multiple batches, images only for reference.

SGB02N60ATMA1

Part No SGB02N60ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Datasheet
SGB02N60ATMA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 6 A
Current - Collector Pulsed (Icm) 12 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2A
Power - Max 30 W
Switching Energy 64µJ
Input Type Standard
Gate Charge 14 nC
Td (on/off) @ 25°C 20ns/259ns
Test Condition 400V, 2A, 118Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Other Names SGB02N60,SGB02N60ATMA1TR,SGB02N60,SP000011978
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277432-SGB02N60ATMA1
Ultra Librarian 3D Model Ultra Librarian SGB02N60ATMA1 CAD Model

Description

The Infineon Technologies SGB02N60ATMA1 IGBT is a high-performance NPT type transistor that is commonly used in applications that require high voltage and current handling capabilities.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 30W
  • Package: TO-263-3, D²Pak package
  • Halogen-Free Compliant: Yes
  • Low Gate Charge: Yes
  • Low On-State Resistance: Yes
  • Ideal Choice For: High-frequency switching applications.
  • Product Status: Obsolete

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