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IRS21856SPBF

Part No IRS21856SPBF
Manufacturer Infineon Technologies
Catalog PMIC - Gate Drivers
Description High(Dual Mode) and Low Side Driver | IC DVR LOW SIDE/DUAL HI 14-SOIC
Sample
Rohs State rohs
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Categories Integrated Circuits
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage (V) 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 3.5V
Current - Peak Output (Source, Sink) 500mA, 500mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time 30ns, 20ns
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 14-SOIC
Supplier Device Package 14-SOIC
Family Part Number IRS21856SPBF
Manufacturer Pack Quantity 55
MSL Level 2 (1 Year)
Win Source Part Number 1188777-IRS21856SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRS21856SPBF CAD Model

Description

The IRS21856SPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver from Infineon Technologies. It is designed for applications requiring robust gate driving capabilities, particularly in environments with high voltage and noise. This driver features a floating channel designed for bootstrap operation, enabling the driving of N-channel MOSFETs and IGBTs in half-bridge configurations. Its advanced level-shift circuit allows high-side gate driver operation up to 600V. The logic input is compatible with standard CMOS or LSTTL outputs, even down to 3.3V logic. The driver incorporates under-voltage lockout (UVLO) protection to prevent MOSFETs or IGBTs from operating in a linear region during start-up or low supply voltage conditions, ensuring reliable system operation.

Applications

  • Half-bridge and full-bridge converters
  • Motor drives
  • Induction heating systems
  • Lighting ballasts
  • Power supplies

Features

  • Floating channel designed for bootstrap operation
  • High-side driver fully operational to +600V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10V to 20V
  • Under-voltage lockout for both channels
  • CMOS Schmitt-triggered inputs with pull-down
  • Matched propagation delay for both channels
  • Output driver features high pulse current buffer stage

Benefits

  • Simplified half-bridge/full-bridge design
  • Increased system reliability due to UVLO protection
  • Improved noise immunity
  • Optimized dead-time control
  • Enhanced efficiency in power conversion systems

Additional Details

The IRS21856SPBF is offered in a DIP-8 or SO-8 package. It is designed to drive MOSFETs and IGBTs with typical gate charges up to several nanocoulombs. The internal dead-time is typically around 360ns. The operating temperature range is -40°C to +125°C. The device uses advanced process techniques to achieve robust monolithic construction. The matched propagation delay of the high and low-side drivers minimizes dead-time requirements, further enhancing system efficiency. Its high dV/dt immunity makes it suitable for noisy switching environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5640 $62.5600
95+ $1.2834 $121.9230
140+ $1.2432 $174.0480
195+ $1.2032 $234.6240
250+ $1.1630 $290.7500
335+ $1.0427 $349.3045
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,920 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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