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IRLZ34NSPBF

Name: IRLZ34NSPBF
Brand: Infineon Technologies
SKU: 606008
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRLZ34NSPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A ) \| MOSFET N-CH 55V 30A D2PAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	55V
Id - Continuous Drain Current	30A
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Maximum) at Id, Vgs	35mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id	2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	25nC at 5V
Gate Source Voltage (Maximum)	±16V
Input Capacitance (Ciss) (Maximum) at Vds	880pF at 25V
Power Dissipation (Maximum)	3.8W, 68W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1188696-IRLZ34NSPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRLZ34NSPBF CAD Model

Description

The Infineon Technologies IRLZ34NSPBF is a high-performance N-channel MOSFET transistor designed for use in discrete semiconductor products. With a drain-source breakdown voltage of 55V and a continuous drain current of 30A, this MOSFET features a maximum Rds On of 35mOhm @ 16A, 10V.

Gate-Source Voltage Threshold: 2V @ 250μA
Gate Charge: 25nC @ 5V
Input Capacitance: 880pF @ 25V
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation: 3.8W and 68W
Supply and demand status: limited

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