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IRLI540NPBF

Name: IRLI540NPBF
Brand: Infineon Technologies
SKU: 605865
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IRLI540NPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	HEXFET Power MOSFET \| MOSFET N-CH 100V 23A TO220FP
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	100V
Id - Continuous Drain Current	23A
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Maximum) at Id, Vgs	44mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id	2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	74nC at 5V
Gate Source Voltage (Maximum)	±16V
Input Capacitance (Ciss) (Maximum) at Vds	1800pF at 25V
Power Dissipation (Maximum)	54W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB Full-Pak
Manufacturer Package	TO-220-3 Full Pack
Manufacturer Pack Quantity	2,000
MSL Level	1 (Unlimited)
Win Source Part Number	1188553-IRLI540NPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Power Management
Ultra Librarian 3D Model	Ultra Librarian IRLI540NPBF CAD Model

Description

The IRLI540NPBF is an N-channel enhancement-mode MOSFET from Infineon Technologies.

Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 23A
Popularity: Medium
Win Source Part Number: 1188553-IRLI540NPBF
Package: TO-220AB Full-Pak
Maximum Power Dissipation: 54W
On-Resistance: 44mOhm @ 12A and 10V
Gate-Source Voltage Threshold: 2V @ 250μA
Gate Charge: 74nC @ 5V
Maximum Gate-Source Voltage: ±16V
Input Capacitance: 1800pF @ 25V
Suitable for: Power management applications in industrial and consumer markets

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